Search results for "Elastic recoil detection"
showing 10 items of 38 documents
Evolution of the microstructure of sputter deposited TaAlON thin films with increasing oxygen partial pressure
2021
Abstract Recently, quaternary oxynitrides of transition metals and aluminum have attracted increasing interest due to their tunable properties. Within the present work, a series of TaAl(O)N films was sputter deposited using constant nitrogen and varying oxygen partial pressures. The films were grown from single element Ta and Al targets. The deposition parameters were adjusted to obtain a Ta/Al atomic ratio of ~50/50 for the oxygen-free film and were held constant for the following depositions, with the exception of the increasing oxygen partial pressure and compensatory decreasing argon partial pressure. Elastic recoil detection analysis revealed oxygen contents of up to ~26 at.%, while th…
Evaluation and Comparison of Novel Precursors for Atomic Layer Deposition of Nb2O5 Thin Films
2012
Atomic layer deposition (ALD) of Nb2O5 thin films was studied using three novel precursors, namely, tBuN═Nb(NEt2)3, tBuN═Nb(NMeEt)3, and tamylN═Nb(OtBu)3. These precursors are liquid at room temperature, present good volatility, and are reactive toward both water and ozone as the oxygen sources. The deposition temperature was varied from 150 to 375 °C. ALD-type saturative growth modes were confirmed at 275 °C for tBuN═Nb(NEt2)3 and tBuN═Nb(NMeEt)3 together with both oxygen sources. Constant growth rate was observed between a temperature regions of 150 and 325 °C. By contrast, amylN═Nb(OtBu)3 exhibited limited thermal stability and thus a saturative growth mode was not achieved. All films we…
Atomic Layer Deposition of LiF Thin Films from Lithd, Mg(thd)2, and TiF4 Precursors
2013
Lithium fluoride is an interesting material because of its low refractive index and large band gap. Previously LiF thin films have been deposited mostly by physical methods. In this study a new way of depositing thin films of LiF using atomic layer deposition (ALD) is presented. Mg(thd)2, TiF4 and Lithd were used as precursors, and they produced crystalline LiF at a temperature range of 300–350 °C. The films were studied by UV–vis spectrometry, field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), atomic force microscopy (AFM), time-of-flight elastic recoil detection analysis (ToF-ERDA), and energy dispersive X-ray spectroscopy (EDX). In addition, film adhesion was t…
Conceptual study of a heavy-ion-ERDA spectrometer for energies below 6 MeV
2017
Abstract Elastic recoil detection analysis (ERDA) is a well established technique and it offers unique capabilities in thin film analysis. Simultaneous detection and depth profiling of all elements, including hydrogen, is possible only with time-of-flight ERDA. Bragg ionization chambers or Δ E - E detectors can also be used to identify the recoiling element if sufficiently high energies are used. The chief limitations of time-of-flight ERDA are the beam induced sample damage and the requirement of a relatively large accelerator. In this paper we propose a detector setup, which could be used with 3 MeV to 6 MeV medium heavy beams from either a single ended accelerator (40Ar) or from a tandem…
Analysis of thin high-k and silicide films by means of heavy ion time-of-flight forward-scattering spectrometry
2006
The use of forward scattered heavy incident ions in combination with a time-of-flight-energy telescope provides a powerful tool for the analysis of very thin (5–30 nm) films. This is because of greater stopping powers and better detector energy resolution for heavier ions than in conventional He-RBS. Because of the forward scattering angle, the sensitivity is greatly enhanced, thus reducing the ion beam induced desorption during the analysis of very thin films. The drawback of forward scattering angle is the limited mass separation for target elements. We demonstrate the performance of the technique with the analysis of 25 nm thick NiSi films and atomic layer deposited 6 nm thick HfxSiyOz f…
Mass calibration of the energy axis in ToF- E elastic recoil detection analysis
2016
We report on procedures that we have developed to mass-calibrate the energy axis of ToF-E histograms in elastic recoil detection analysis. The obtained calibration parameters allow one to transform the ToF-E histogram into a calibrated ToF-M histogram.
Oxy-nitrides characterization with a new ERD-TOF system
2017
Abstract A new time-of-flight (TOF) camera was installed on Elastic Recoil Detection (ERD) measurement setup on the Tandem Accelerator at Universite de Montreal. The camera consists of two timing detectors, developed and built by the Jyvaskyla group, that use a thin carbon foil and microchannel plates (MCP) to produce the start and stop signals. The position of the first detector is fixed at 18 cm from the target, while the position of the second detector can be varied between 50 and 90 cm from the first detector. This allows to increase time resolution by increasing the distance between the time-of-flight detectors or to increase solid angle by decreasing the distance. Moving the detector …
Irradiation-induced damage in porous low-k materials during low-energy heavy-ion elastic recoil detection analysis
2006
Abstract With the implementation of time-of-flight elastic recoil detection (ToF-ERD) for the analysis of thin films with high depth resolution using a standard ‘low-energy’ accelerator, routine application of ERD in semiconductor technology becomes possible. In case of irradiation-sensitive materials, like organosilicate low- k films, the energetic incident beam damages the sample during the measurement, resulting in loss of the lighter elements and, as a consequence, altering the sample composition. The ion beam induced damage is investigated for 19 F, 35 Cl, 63 Cu, 79 Br and 127 I beams at energies of 6–16 MeV and typical fluences for ERD analysis. By means of Fourier transform infrared …
Considerations about multiple and plural scattering in heavy-ion low-energy ERDA
2009
Abstract Low-energy heavy-ion Elastic Recoil Detection Analysis (ERDA) is becoming a mature technique for high-resolution characterization of thin films, i.e. below 50 nm thickness. In combination with a small tandem accelerator (∼2 MV terminal voltage) and beam energies below 20 MeV, it is suitable for routine analysis of key materials in semiconductor technology. At low-energies, however, small angle multiple scattering and large angle plural scattering of ions play a significant role, starting from the first nanometers. Multiple and plural scattering dominate the depth resolution deterioration with increasing depth and, when glancing angles are used, introduce long tails in the elemental…
Elastic Recoil Detection Analysis
2008
In 1976, a Canadian group described in detail for the first time a new ion beam analytical method based on the elastic recoil of target nuclei collided with high-energy heavy incident ions. In this case, 25–40-MeV 35Cl impinged on a multilayer C or Cu (backing)/LiF or LiOH/Cu (30–150 nm)/LiF or LiOH and H, Li, O, and F recoiled atoms were detected. These exemplified the main characteristics of elastic recoil detection analysis (ERDA): its sensitivity to depth distribution and its ability to detect light elements in heavy substrates. In 1979, the use of megaelectronvolt energy 4He beams permitted the use of ERDA to be extended to depth profiling of hydrogen isotopes in the near-surface regio…